2SD2375 Просмотр технического описания (PDF) - Panasonic Corporation
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2SD2375 Datasheet PDF : 4 Pages
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Power Transistors
2SD2375
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
■ Features
• High forward current transfer ratio hFE which has satisfactory lin-
earity
• Full-pack package which can be installed to the heat sink with one
screw
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
80
V
Collector-emitter voltage (Base open) VCEO
60
V
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
6
A
Base current
IB
1
A
Collector power dissipation
PC
25
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
9.9±0.3
Unit: mm
4.6±0.2
2.9±0.2
φ 3.2±0.1
1.4±0.2
1.6±0.2
0.8±0.1
2.6±0.1
0.55±0.15
2.54±0.30
5.08±0.50
123
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *
Collector-emitter saturation voltage
Transition frequency
VCEO
ICBO
ICEO
IEBO
hFE
VCE(sat)
fT
IC = 25 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.5 A
IC = 2 A, IB = 0.05 A
VCE = 12 V, IC = 0.2 A, f = 10 MHz
60
V
100 µA
100 µA
100 µA
500
1 500
1.0
V
50
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
P
hFE
500 to 1 000 800 to 1 500
Publication date: September 2003
SJD00262BED
1
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