D2345 Просмотр технического описания (PDF) - Panasonic Corporation
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D2345 Datasheet PDF : 4 Pages
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Transistors
2SD2345
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
• High forward current transfer ratio hFE
• Low collector-emitter saturation voltage VCE(sat)
• High emitter-base voltage (Collector open) VEBO
• Low noise voltage NV
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
50
V
Collector-emitter voltage (Base open) VCEO
40
V
Emitter-base voltage (Collector open) VEBO
15
V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
125
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg −55 to +125 °C
0.2+–00..015
3
Unit: mm
0.15+–00..015
1
2
(0.5) (0.5)
1.0±0.1
1.6±0.1
5˚
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Marking symbo：l 1Z
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
40
Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
15
Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0
Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0
Forward current transfer ratio *
hFE VCE = 10 V, IC = 2 mA
400
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
100
1
2 000
0.05 0.20
120
V
V
V
nA
µA
V
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
S
T
hFE
400 to 800 600 to 1 200 1 000 to 2 000
Publication date: January 2003
SJC00257BED
1
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