2SD2273 Просмотр технического описания (PDF) - Panasonic Corporation
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производитель
2SD2273 Datasheet PDF : 3 Pages
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Power Transistors
80
70
60
50 (1)
40
PC — Ta
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.5W)
30
20
(2)
10
(3)
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
VCE(sat) — IC
100
IC/IB=1000
30
10
TC=100˚C
25˚C
3
–25˚C
1
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
ton, tstg, tf — IC
100
Pulsed tw=1ms
Duty cycle=1%
30
IC/IB=1000 (IB1=–IB2)
VCC=50V
10
TC=25˚C
ton
3
tstg
1
tf
0.3
0.1
0.03
0.01
0
2
4
6
8
Collector current IC (A)
IC — VCE
6
TC=25˚C
5
4
IB=3mA
0.5mA
3
0.4mA
0.3mA
2
0.2mA
1
0.1mA
0
0 2 4 6 8 10 12
Collector to emitter voltage VCE (V)
2SD2273
VBE(sat) — IC
100
IC/IB=1000
30
10
3
TC=–25˚C
1
100˚C
25˚C
0.3
0.1
0.1 0.3 1 3 10 30 100
Collector current IC (A)
100000
hFE — IC
VCE=5V
10000
TC=100˚C
1000
25˚C
100 –25˚C
10
0.01
0.1
1
10
Collector current IC (A)
1000
300
100
Cob — VCB
IE=0
f=1MHz
TC=25˚C
30
10
3
1
1
3
10
30
100
Collector to base voltage VCB (V)
Area of safe operation (ASO)
100
Non repetitive pulse
TC=25˚C
30
10 ICP
3 IC
1
10ms
t=1ms
DC
0.3
0.1
0.03
0.01
1 3 10 30 100 300 1000
Collector to emitter voltage VCE (V)
2
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