2SD2027 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD2027

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SD2027

ELECTRICAL CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 1mA; IC= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.2A

VBE(on) Base-Emitter On Voltage

IC= 0.5A; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 40V; IE=0

IEBO

Emitter Cutoff Current

VEB= 4V; IC=0

hFE-1

DC Current Gain

IC= 0.5A; VCE= 5V

hFE-2

DC Current Gain

IC= 3A ; VCE= 5V

COB

Output Capacitance

IE= 0; VCB= 10V, f= 1MHz

fT

Current-Gain—Bandwidth Product

IC= 0.5A ; VCE= 5V

MIN TYP. MAX UNIT

60

V

60

V

6

V

1.0

V

1.0

V

100 μA

100 μA

70

280

20

60

pF

8

MHz

‹ hFE-1 Classifications

Q

R

S

70-140 100-200 140-280

isc Website：www.iscsemi.cn

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