2SD2024 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD2024 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2024
DESCRIPTION
·With TO-220C package
·High DC current gain
·Low saturation voltage
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier and
power driver applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector -emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
Ta=25℃
TC=25℃
VALUE
100
100
7
8
10
2
40
150
-55~150
UNIT
V
V
V
A
A
W
℃
℃
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