2SD2130 Просмотр технического описания (PDF) - Toshiba
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2SD2130 Datasheet PDF : 5 Pages
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2SD2130
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
V (BR) EBO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 45 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IE = 0
IC = 10 mA, IB = 0
IE = 10 mA, IC = 0
VCE = 2 V, IC = 1 A
VCE = 2 V, IC = 3 A
IC = 3 A, IB = 10 mA
IC = 3 A, IB = 10 mA
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min
―
0.6
50
50
6
2000
1000
―
―
―
―
Typ. Max Unit
―
10
µA
―
2.0 mA
60
70
V
60
70
V
―
―
V
― 15000
―
―
―
1.5
V
―
2.0
V
60
― MHz
30
―
pF
Turn-on time
Switching time Storage time
ton
Output
―
0.2
―
20 µs InputIB1
tstg
IB2
―
3.0
―
µs
Fall time
VCC = 30 V
tf
―
0.5
―
IB1 = −IB2 = 10 mA, duty cycle ≤ 1%
Marking
Lot No.
D2130
Product No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2
2003-02-04
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