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2SD2092 Просмотр технического описания (PDF) - Toshiba

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Компоненты Описание
производитель
2SD2092 Datasheet PDF : 5 Pages
1 2 3 4 5
2SD2092
VCE (sat) – IC
3
Common emitter
IC/IB = 100
1
0.5
0.3
Tc = 100°C
25
0.1
55
0.05
0.03
0.05 0.1
0.3 0.5 1
35
10
Collector current IC (A)
VBE (sat) – IC
5
Common emitter
3
IC/IB = 100
1
Tc = 55°C
25
0.5
100
0.3
0.1
0.05
0.1
0.3 0.5
1
3
Collector current IC (A)
IC – VBE
3.0
Common emitter
2.5 VCE = 1 V
2.0
1.5
Tc = 100°C 25 55
1.0
0.5
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base-emitter voltage VBE (V)
Safe Operating Area
10
IC max (pulsed)*
5
IC max
(continuous)
3
10 ms*
100 ms*
1
100 μs*
1 ms*
0.5
DC operation
Tc = 25°C
0.3
0.1
*: Single nonrepetitive pulse
Tc = 25°C
0.05 Curves must be derated linearly
with increase in temperature.
0.03
VCEO max
2
5
10
30 50 100 200
Collector-emitter voltage VCE (V)
rth – tw
100
Curves should be applied in thermal limited area.
(ingle nonrepetitive pulse)
30
(1) Infinite heat sink
(2) No heat sink
10
3
1
0.3
0.001
0.01
0.1
1
10
Pulse width tw (s)
(2)
(1)
100
1000
4
2006-11-21

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