Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
2SD2092 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SD2092
Transistor Silicon NPN Epitaxial Type
Toshiba
2SD2092 Datasheet PDF : 5 Pages
1
2
3
4
5
2.8
20
10
2.4
2.0
I
C
– V
CE
4
2
Common emitter
Tc = 25°C
1.6
1.4
1.2
1
0.8
0.5
0.4
IB = 0.2 mA
0
0
0 2 4 6 8 10 12 14 16 18
Collector-emitter voltage V
CE
(V)
1.2
IB = 0.5 mA
1.0
2
0.8
V
CE
– I
C
Common emitter
Tc = 100°C
4
10 14 20 30
0.6
40
0.4
80
0.2
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current I
C
(A)
2SD2092
1.2
IB = 0.5 mA
1.0
2
0.8
V
CE
– I
C
Common emitter
Tc = 25°C
4
10 14 20
0.6
30
0.4
40
0.2
80
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current I
C
(A)
1.2
IB = 0.5 mA
1.0
2
0.8
V
CE
– I
C
Common emitter
Tc =
−
55°C
4
10 14 20
0.6
30
0.4
40
0.2
80
0
0
0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current I
C
(A)
h
FE
– I
C
3000
1000
500
VCE = 5 V
300
2
Common emitter
100
1
Tc = 25°C
50
0.05 0.1
0.3 0.5 1
35
10
Collector current I
C
(A)
3000
Tc = 100°C
1000
25
−
55
500
300
h
FE
– I
C
Common emitter
VCE = 1 V
100
50
0.05 0.1
0.3 0.5 1
35
10
Collector current I
C
(A)
3
2006-11-21
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]