2SD1950 Просмотр технического описания (PDF) - TY Semiconductor

Номер в каталоге

Компоненты Описание

производитель

2SD1950

NPN Silicon Epitaxia

TY Semiconductor 

SMD Type

TransistIoCrs

Product specification

2SD1950

Features

High dc current gain and good hFE.

Low collector saturation voltage.

High VEBO.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

30

V

Collector-emitter voltage

VCEO

25

V

Emitter-base voltage

VEBO

15

V

Collector current

IC

2

A

Collector current (Pulse) *

IC

3

A

Total power dissipation

PT

2

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55 to +150

* PW 10ms, duty cycle 50%

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain *

Collector saturation voltage

Base saturation voltage

Base to emitter voltage *

Gain bandwidth product

Output capacitance

* Pulsed: PW 350 ìs, duty cycle 2%

Symbol

Testconditons

ICBO VCB = 30 V, IE = 0

IEBO VEB = 10 V, IC = 0

VCE = 5.0 V, IC = 1.0 A

hFE

VCE = 5.0 V, IC = 2.0 A

VCE(sat) IC = 1 A, IB = 10 mA

VBE(sat) IC = 1 A, IB = 10 mA

VBE VCE = 5.0 V, IC = 300 mA

fT VCE = 10 V, IE = -500 mA

Cob VCB = 10 V, IE = 0 , f = 1.0 MHz

hFE Classification

Marking

hFE

VM

800 1600

VL

1200 2400

VK

2000 3200

Min Typ Max Unit

100 nA

100 nA

800 1500 3200

400

0.18 0.3 V

0.83 1.2 V

600 660 700 mV

150 350

MHz

26 35 pF

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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