2SD1718 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SD1718 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1718
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEsat Collector-emitter saturation voltage IC=10A ;IB=1A
VBE
Base-emitter voltage
IC=8A ; VCE=5V
ICBO
IEBO
hFE-1
hFE-2
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
VCB=180V; IE=0
VEB=3V; IC=0
IC=20mA ; VCE=5V
IC=1A ; VCE=5V
hFE-3
DC current gain
IC=8A ; VCE=5V
fT
Transition frequency
COB
Collector output capacitance
IC=0.5A ; VCE=5V
f=1MHz;VCB=10V
MIN TYP. MAX UNIT
2.5
V
1.8
V
50
µA
50
µA
20
60
200
20
20
MHz
230
pF
hFE-2 classifications
Q
S
60-100
80-160
P
100-200
2
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