2SD1655 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SD1655 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1655
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=;
V(BR)CBO Collector-base breakdown voltage
IC=5mA; IE=0
VCEsat Collector-emitter saturation voltage IC=4A;IB=0.8A
VBEsat
Base-emitter saturation voltage
IC=4A;IB=0.8A
IEBO
Emitter cut-off current
ICBO
Collector cut-off current
hFE
DC current gain
fT
Transition frequency
tf
Fall time
VEB=5V; IC=0
VCB=800V; IE=0
IC=1 A ; VCE=5V
IC=1 A ; VCE=10V
IC=4A;IB1=0.8A;IB2=-1.6A
VCC=200V;RL=50@
MIN TYP. MAX UNIT
800
1500
5.0
V
1.5
V
1.0
mA
10
µA
8
3
MHz
0.7
µs
2
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