2SD1652 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SD1652

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1652

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IE=200mA , IC=0

V(BR)CEO Collector-emitter breakdown voltage IC=0.1A; RBE=<

V(BR)CBO Collector-base breakdown voltage

IC=5mA; IE=0

VCEsat Collector-emitter saturation voltage IC=5A ;IB=1A

VBEsat

Base-emitter saturation voltage

IC=5A ;IB=1A

ICBO

Collector cut-off current

VCB=800V; IE=0

IEBO

Emitter cut-off current

VEB=4V; IC=0

hFE

DC current gain

IC=1A ; VCE=5V

fT

Transition frequency

VF

Diode forward voltage

tf

Fall time

IC=1A ; VCE=10V

IF=6A

IC=5A;IB1=1A;IB2=-2A

VCC=200V;RL=40B

MIN TYP. MAX UNIT

7

V

800

V

1500

V

5.0

V

1.5

V

10

µA

40

130 mA

8

3

MHz

2.0

V

0.4

µs

2

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