2SD1756 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SD1756 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1756
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 170V(Min)
·High DC Current Gain
: hFE= 1500(Min) @IC= 5A
·Low Collector Saturation Voltage
APPLICATIONS
·Designed for high voltage high current amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICP
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
200
V
7
V
10
A
15
A
40
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
Share Link: 