2SD1737 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1737 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1737
DESCRIPTION
·High Voltage
·High Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3.5
A
ICP
Collector Current-Peak
10
A
IBB
Base Current- Continuous
Collector Power Dissipation
PC
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
1.5
A
60
W
150
℃
-55-150 ℃
isc Website：www.iscsemi.cn
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