2SD1597 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD1597

Silicon NPN Darlington Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Darlington Power Transistor

isc Product Specification

2SD1597

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ;IB=B 0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= 5mA ;IC=0

VCE(sat) Collector-Emitter Saturation Voltage IC= 30A; IB= 0.1A

VBE(sat) Base-Emitter Saturation Voltage

IC= 30A; IB= 0.1A

ICEO

Collector Cutoff Current

VCE= 60V; IB=B 0

ICBO

Collector Cutoff Current

VCB= 120V;IE= 0

IEBO

Emitter Cutoff Current

VEB= 7V; IC=0

hFE

DC Current Gain

IC= 15A ; VCE= 2V

MIN TYP. MAX UNIT

120

V

7

V

2.0

V

2.5

V

1.0

mA

10

μA

5

mA

1000

isc Website：www.iscsemi.cn

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