2SD1497 Просмотр технического описания (PDF) - SavantIC Semiconductor
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2SD1497 Datasheet PDF : 3 Pages
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SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1497
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=;
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat
Base-emitter saturation voltage
IC=5A; IB=1A
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
DC current gain
tf
Fall time
VCE=1500V; VBE=1.5V
VEB=7V; IC=0
IC=0.3A ; VCE=5V
IC=5A ; VCE=5V
ICP=4A;IB1=1.3A; LB=0
MIN TYP. MAX UNIT
7
V
600
V
5.0
V
1.5
V
1.0
mA
1.0
mA
10
30
5
2.0
µs
2
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