2SD1496 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SD1496

Silicon NPN Power Transistors

SavantIC Semiconductor  

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SD1496

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)EBO Emitter-base breakdown voltage

IE=10mA; IC=0

6

V

V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞

600

V

VCEsat Collector-emitter saturation voltage IC=4.5A; IB=1.2A

5.0

V

VBEsat Base-emitter saturation voltage

ICEX

Collector cut-off current

IEBO

Emitter cut-off current

IC=4.5A; IB=1.2A

VCE=1500V; VBE=1.5V

VEB=6V; IC=0

1.5

V

1.0 mA

1.0 mA

hFE

DC current gain

tf

Fall time

IC=0.3A ; VCE=5V

10

IC=3A;IB1=0.7A, IB2=-2.7A; LB=0

30

2.3

μs

2

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