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2SD1263 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2SD1263
Iscsemi
Inchange Semiconductor Iscsemi
2SD1263 Datasheet PDF : 4 Pages
1 2 3 4
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1263 2SD1263A
DESCRIPTION
·With TO-220Fa package
·High breakdown voltalge
APPLICATIONS
·For power amplification
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector
Emitter
·
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25)
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD1263
2SD1263A
Open emitter
VCEO
Collector-emitter voltage
2SD1263
2SD1263A
Open base
VEBO
Emitter-base voltage
Open collector
IC
Collector current
ICM
Collector current-peak
PC
Collector power dissipation
Ta=25
TC=25
Tj
Junction temperature
Tstg
Storage temperature
VALUE
350
400
250
300
5
0.75
1.5
2
35
150
-55~150
UNIT
V
V
V
A
A
W

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