2SD1497 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1497 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=10mA; IC=0
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞
VCEsat Collector-emitter saturation voltage IC=5A; IB=1A
VBEsat Base-emitter saturation voltage
ICEX
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A; IB=1A
VCE=1500V; VBE=1.5V
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.3A ; VCE=5V
hFE-2
DC current gain
IC=5A ; VCE=5V
tf
Fall time
ICP=4A;IB1=1.3A; LB=0
Product Specification
2SD1497
MIN TYP. MAX UNIT
7
V
600
V
5.0
V
1.5
V
1.0 mA
1.0 mA
10
30
5
2.0
μs
2
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