2SD1493 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1493 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1493
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.6A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2A; IB=B 0.6A
ICBO
Collector Cutoff Current
VCB= 600V; IE= 0
MIN TYP. MAX UNIT
800
V
6
V
5.0
V
1.5
V
10 μA
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