2SD1479 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1479 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=1A
VBEsat Base-emitter saturation voltage
IC=2A; IB=1A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
VCB=750V; IE=0
VCB=1500V; IE=0
VEB=5V; IC=0
hFE
DC current gain
IC=2A ; VCE=5V
ts
Storage time
tf
Fall time
IC=2.5A
IBend=1.1A,LB=10μH
Product Specification
2SD1479
MIN TYP. MAX UNIT
5
V
5.0
V
1.5
V
50
μA
1.0
mA
50
μA
2
5
9.0
μs
1.0
μs
2
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