2SD1383K Просмотр технического описания (PDF) - ROHM Semiconductor
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2SD1383K Datasheet PDF : 4 Pages
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High-gain Amplifier Transistor (32V , 0.3A)
2SD1383K
Features
1) Darlington connection for high DC current gain.
2) Built-in 4k resistor between base and emitter.
3) Complements the 2SB852K.
Packaging specifications
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SD1383K
SMT3
B
W∗
T146
3000
Dimensions (Unit : mm)
2SD1383K
(1)Emitter
(2)Base
(3)Collector
Each lead has same dimensions
Circuit diagram
C
B
RBE 4kΩ
E : Emitter
B : Base
C : Collector
E
Absolute maximum ratings (Ta=25C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗1 RBE=0Ω
∗2 Single pulse Pw=10ms
Symbol
VCBO
VCES
VEBO
IC
PC
Tj
Tstg
Limits
40
32
6
0.3
1.5
0.2
150
−55 to +150
Unit
V
V ∗1
V
A (DC)
A (Pulse) ∗2
W
°C
°C
Electrical characteristics (Ta=25C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
∗1 Measured using pulse current.
∗2 Transition frequency of the device.
Symbol
BVCBO
BVCES
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
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○c 2011 ROHM Co., Ltd. All rights reserved.
Min.
40
32
6
−
−
5000
−
−
−
Typ.
−
−
−
−
−
−
−
250
3
Max.
−
−
−
1
1
−
1.5
−
−
Unit
V
V
V
μA
μA
−
V
MHz
pF
Conditions
IC=100μA
IC= −1mA , RBE=0Ω
IE=100μA
VCB=24V
VEB=4.5V
VCE=5V, IC=0.1A
IC=200mA, IB=0.4mA
∗1
VCE=5V, IE= −10mA, f=100MHz ∗2
VCB=10V, IE=0A, f=1MHz
1/2
2011.10 - Rev.D
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