D1158 Просмотр технического описания (PDF) - Inchange Semiconductor
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D1158 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0
V(BR)CBO Collector-base breakdown voltage
IC=0.1mA ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=0.1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=2A, IB=0.1A
VBEsat Base-emitter saturation voltage
IC=2A, IB=0.1A
ICBO
Collector cut-off current
VCB=80V;IE=0
IEBO
Emitter cut-off current
VEB=10V; IC=0
hFE
DC current gain
IC=1A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A;IB1=-IB2=0.5A
RL=6Ω
Pw = 20μs, Duty≤2%
Product Specification
2SD1158
MIN TYP. MAX UNIT
50
V
80
V
10
V
0.5
V
1.5
V
0.1 mA
0.1 mA
250
0.5
μs
3.0
μs
0.8
μs
2
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