D1044 Просмотр технического описания (PDF) - Inchange Semiconductor
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D1044 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1044
DESCRIPTION
·High DC Current Gain
: hFE= 700(Min.)@ IC= 1A, VCE= 4V
·High Collector-Emitter Breakdown Voltage-
: V(BR) CEO= 80V(Min)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100
V
VCER Collector-Emitter Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
6
A
IBB
Base Current- Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
3
A
60
W
150
℃
-55~150 ℃
isc Website：www.iscsemi.cn
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