2SD1224 Просмотр технического описания (PDF) - Toshiba

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производитель

2SD1224

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Darlington)

Toshiba 

Electrical Characteristics (Ta = 25°C)

2SD1224

Characteristics

Collector cut-off current

Emitter cut-off current

Collector-emitter breakdown voltage

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Symbol

Test Condition

ICBO

IEBO

V (BR) CEO

hFE

VCE (sat)

VBE (sat)

VCB = 30 V, IE = 0

VEB = 10 V, IC = 0

IC = 10 mA, IB = 0

VCE = 2 V, IC = 150 mA

IC = 1 A, IB = 1 mA

IC = 1 A, IB = 1 mA

Min Typ. Max Unit

―

―

10

μA

―

―

10

μA

30

―

―

V

4000 ―

―

―

―

1.5

V

―

―

2.2

V

Turn-on time

Switching time Storage time

Fall time

ton

OUTPUT

―

0.18 ―

20 μs

IB1

INPUT

tstg

IB2

IB2

―

0.6

―

μs

VCC ≈ 15 V

tf

IB1 = −IB2 = 1 mA,

DUTY CYCLE ≤ 1%

―

0.3

―

Marking

D1224

Part No. (or abbreviation code)

Lot No.

A line indicates

lead (Pb)-free package or

lead (Pb)-free finish.

2

2006-11-21

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