2SD1199 Просмотр технического описания (PDF) - Panasonic Corporation
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2SD1199 Datasheet PDF : 2 Pages
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Transistor
2SD1199
Silicon NPN epitaxial planer type
For low-frequency amplification
s Features
q High foward current transfer ratio hFE.
q Low collector to emitter saturation voltage VCE(sat).
q High emitter to base voltage VEBO.
q Low noise voltage NV.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
6.9±0.1
1.5
1.5 R0.9
R0.9
R0.7
0.85
0.55±0.1
Unit: mm
2.5±0.1
1.0
0.45±0.05
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
50
V
Collector to emitter voltage VCEO
40
V
Emitter to base voltage
VEBO
15
V
Peak collector current
ICP
100
mA
Collector current
IC
50
mA
Collector power dissipation PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
3
2
1
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Symbol
Conditions
min
typ
max Unit
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
ICBO
ICEO
VCBO
VCEO
VEBO
hFE*
VCE(sat)
fT
Noise voltage
NV
VCB = 20V, IE = 0
VCE = 20V, IB = 0
IC = 10µA, IE = 0
50
IC = 1mA, IB = 0
40
IE = 10µA, IC = 0
15
VCE = 10V, IC = 2mA
400
IC = 10mA, IB = 1mA
VCB = 10V, IE = –2mA, f = 200MHz
VCE = 10V, IC = 1mA, GV = 80dB
Rg = 100kΩ, Function = FLAT
100
nA
1
µA
V
V
V
2000
0.05
0.2
V
120
MHz
80
mV
*hFE Rank classification
Rank
R
S
T
hFE
400 ~ 800 600 ~ 1200 1000 ~ 2000
1
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