2SD1205 Просмотр технического описания (PDF) - Panasonic Corporation
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2SD1205 Datasheet PDF : 3 Pages
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Transistors
2SD1205, 2SD1205A
Silicon NPN epitaxial planar type darlington
For low-frequency amplification
■ Features
• Forward current transfer ratio hFE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer: hFE = 4 000
to 20 000.
• A shunt resistor is omitted from the driver.
• M type package allowing easy automatic and manual insertion as well as
stand-alone fixing to the printed circuit board.
6.9±0.1
(1.5)
(1.5)
R 0.7
R 0.9
Unit: mm
2.5±0.1
(1.0)
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
(0.85)
0.55±0.1
0.45±0.05
Collector-base voltage 2SD1205 VCBO
30
V
(Emitter open)
2SD1205A
60
Collector-emitter voltage 2SD1205 VCEO
25
V
(Base open)
2SD1205A
50
Emitter-base voltage (Collector open) VEBO
5
V
Collector current
IC
500
mA
Peak collector current
ICP
750
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
3
2
1
(2.5) (2.5)
Internal Connection
B
1: Base
2: Collector
3: Emitter
M-A1 Package
C
≈ 200 Ω E
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage
2SD1205 VCBO IC = 100 µA, IE = 0
30
V
(Emitter open)
2SD1205A
60
Collector-emitter voltage
(Base open)
2SD1205 VCEO
2SD1205A
IC = 1 mA, IB = 0
25
V
50
Emitter-base voltage (Collector open) VEBO IE = 100 µA, IC = 0
5
V
Collector-base cutoff current (Emitter open) ICBO VCB = 25 V, IE = 0
100 nA
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1, 2
Collector-emitter saturation voltage *1
Base-emitter saturation voltage *1
IEBO
hFE
VCE(sat)
VBE(sat)
VEB = 4 V, IC = 0
VCE = 10 V, IC = 500 mA
IC = 500 mA, IB = 0.5 mA
IC = 500 mA, IB = 0.5 mA
4 000
100 nA
20 000
2.5
V
3
V
Transition frequency
fT
VCB = 10 V, IE = −50 mA, f = 200 MHz
150
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
hFE
4 000 to 10 000 8 000 to 20 000
Publication date: December 2002
SJC00211BED
1
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