2SD1205(2001) Просмотр технического описания (PDF) - Panasonic Corporation
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2SD1205 Datasheet PDF : 3 Pages
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Transistor
2SD1205, 2SD1205A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
s Features
q Forward current transfer ratio hFE is designed high, which is ap-
propriate to the driver circuit of motors and printer bammer: hFE
= 4000 to 2000.
q A shunt resistor is omitted from the driver.
q M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1205
30
base voltage 2SD1205A
VCBO
60
V
Collector to 2SD1205
25
emitter voltage 2SD1205A
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Peak collector current
ICP
750
mA
Collector current
IC
500
mA
Collector power dissipation PC
400
mW
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
s Electrical Characteristics (Ta=25˚C)
6.9±0.1
1.5
1.5 R0.9
R0.9
2.5±0.1
1.0
0.85
0.55±0.1
3
2
1
0.45±0.05
2.5 2.5
1:Base
2:Collector
3:Emitter
EIAJ:SC–71
M Type Mold Package
Internal Connection
C
B
≈200Ω E
Parameter
Symbol
Collector cutoff current
Emitter cutoff current
Collector to base 2SD1205
voltage
2SD1205A
ICBO
IEBO
VCBO
Collector to emitter 2SD1205
voltage
2SD1205A VCEO
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
VEBO
hFE*1
VCE(sat)
VBE(sat)
fT
Conditions
VCB = 25V, IE = 0
VEB = 4V, IC = 0
IC = 100µA, IE = 0
IC = 1mA, IB = 0
IE = 100µA, IC = 0
VCE = 10V, IC = 500mA*2
IC = 500mA, IB = 0.5mA*2
IC = 500mA, IB = 0.5mA*2
VCB = 10V, IE = –50mA, f = 200MHz
*1hFE Rank classification
Rank
Q
R
hFE
4000 ~ 10000 8000 ~ 20000
min
30
60
25
50
5
4000
typ max Unit
100
nA
100
nA
V
V
V
20000
2.5
V
3
V
150
MHz
*2 Pulse measurement
1
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