2SC6087 Просмотр технического описания (PDF) - Toshiba
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2SC6087 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC6087
2SC6087
Power Amplifier Applications
Power Switching Applications
Unit: mm
Low collector emitter saturation voltage
: VCE (sat) = 0.5 V (max)（IC = 1A）
High-speed switching: tstg = 0.4 μs (typ)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
DC
Pulse
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
Unit
160
V
160
V
80
V
7
V
2.5
A
5.0
A
1.0
A
1.3
W
150
°C
−55～150
°C
1 : BASE
2 : COLLECTOR
3 : EMITTER
JEDEC
―
JEITA
―
TOSHIBA
2-8M1A
Weight:0.55g(typ)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2007-06-07
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