2SC6026 Просмотр технического описания (PDF) - Toshiba
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2SC6026 Datasheet PDF : 3 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC6026
2SC6026
General-Purpose Amplifier Applications
• High voltage and high current
: VCEO = 50 V, IC = 100 mA (max)
• Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• High hFE
: hFE = 120~400
• Complementary to 2SA2154
• Lead (Pb) free
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
60
V
50
V
5
V
100
mA
30
mA
50
mW
150
°C
−55~150
°C
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
ICBO
VCB = 60 V, IE = 0
Emitter cutoff current
IEBO
VEB = 5 V, IC = 0
DC current gain
hFE (Note) VCE = 6 V, IC = 2 mA
Collector-emitter saturation voltage
VCE (sat) IC = 100 mA, IB = 10 mA
Transition frequency
fT
VCE = 10 V, IC = 1 mA
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE classification Y (F): 120~240, GR (H): 200~400
( ) marking symbol
Marking
Type Name
hFE Rank
Unit: mm
1
3
2 0.8±0.05
1.0±0.05
0.1±0.05
0.1±0.05
1.BASE
2.EMITTER
fSM
3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-1E1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
⎯
⎯
0.1
µA
⎯
⎯
0.1
µA
120 ⎯ 400 ⎯
⎯
0.1 0.25
V
60
⎯
⎯ MHz
⎯ 0.95 ⎯
pF
7F
1
2005-03-23
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