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Номер в каталоге
Компоненты Описание
2SC5712(2001) Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SC5712
(Rev.:2001)
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
2SC5712 Datasheet PDF : 5 Pages
1
2
3
4
5
I
C
– V
CE
4
Common emitter
Ta
=
25°C
Single nonrepetitive
70
60 50
pulse
3
40
30
20
2
10
5
1
2
IB
=
1 mA
0
0
0.2
0.4
0.6
0.8
1
Collector-emitter voltage V
CE
(V)
V
CE (sat)
– I
C
1
Common emitter
b =
50
Single nonrepetitive
pulse
25
0.1
Ta
=
100°C
-
55
0.01
0.001
0.001
0.01
0.1
1
Collector current I
C
(A)
2SC5712
10000
Common emitter
VCE
=
2 V
Single nonrepetitive
pulse
h
FE
– I
C
1000
Ta
=
100°C
25
-
55
100
10
0.001
0.01
0.1
1
Collector current I
C
(A)
V
BE (sat)
– I
C
100
Common emitter
IC/IB
=
50
Single nonrepetitive
pulse
10
1
0.1
0.001
25
-
55
Ta
=
100°C
0.01
0.1
1
Collector current I
C
(A)
3
Common emitter
VCE
=
2 V
Single nonrepetitive
pulse
2
V
BE
– I
C
Ta
=
100°C
1
25
-
55
0
0
0.4
0.8
1.2
1.6
Collector current I
C
(A)
3
2001-12-17
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