C5926 Просмотр технического описания (PDF) - Panasonic Corporation
Номер в каталоге
Компоненты Описание
производитель
C5926 Datasheet PDF : 2 Pages
| |||
Power Transistors
2SC5926
Silicon NPN triple diffusion planar type
For power amplification
10.0±0.2
Unit: mm
5.0±0.1
1.0±0.2
■ Features
• High forward current transfer ratio hFE which has satisfactory linearity.
• Low collector-emitter saturation voltage VCE(sat)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
80
V
Collector-emitter voltage (Base open) VCEO
60
V
Emitter-base voltage (Collector open) VEBO
6
V
Collector current
IC
3
A
Peak collector current
ICP
6
A
Collector power dissipation
PC
15
W
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Non-repetitive peak collector current
0.65±0.1
0.35±0.1
2.5±0.2
1.2±0.1
1.48±0.2
0.65±0.1
1.05±0.1
0.55±0.1
2.5±0.2
C 1.0
2.25±0.2
0.55±0.1
123
1: Base
2: Collector
3: Emitter
MT-4-A1 Package
Internal Connection
C
B
E
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio *1
Collector-emitter saturation voltage
Turn-on time
Storage time
Fall time
VCEO
ICBO
ICEO
IEBO
hFE1 *2
hFE2
VCE(sat)
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 80 V, IE = 0
VCE = 40 V, IB = 0
VEB = 6 V, IC = 0
VCE = 4 V, IC = 0.5 A
VCE = 4 V, IC = 3 A
IC = 1 A, IB = 20 mA
IC = 1 A, Resistance loaded
IB1 = 0.1 A, IB2 = − 0.1 A
VCC = 50 V
60
V
100 µA
100 µA
100 µA
500
2 300
100
0.7
V
0.2
µs
1.5
µs
0.1
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
P
hFE1
500 to 1 500 1 300 to 2 300
Publication date: November 2004
SJD00326AED
1
Share Link: 