2SC5886 Просмотр технического описания (PDF) - Toshiba
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2SC5886 Datasheet PDF : 5 Pages
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Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Rise time
Switching time
Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
tr
tstg
tf
VCB = 100 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 0.5 A
VCE = 2 V, IC = 1.6 A
IC = 1.6 A, IB = 32 mA
IC = 1.6 A, IB = 32 mA
See Figure 1.
VCC ∼− 24 V, RL = 15 Ω
IB1 = 32 mA, IB2 = −53 mA
2SC5886
Min Typ. Max Unit
⎯
⎯
100
nA
⎯
⎯
100
nA
50
⎯
⎯
V
400 ⎯ 1000
200 ⎯
⎯
⎯
⎯
0.22
V
⎯
⎯
1.10
V
⎯
63
⎯
⎯
560
⎯
ns
⎯
55
⎯
20 μs
IB1
IB1
Input
IB2
IB2
Duty cycle < 1%
VCC
Output
Figure 1 Switching Time Test Circuit & Timing Chart
Marking
C5886
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2
2006-11-10
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