C5480 Просмотр технического описания (PDF) - Inchange Semiconductor

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C5480

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5480

DESCRIPTION

·High Breakdown Voltage-

: VCBO= 1500V (Min)

·High Switching Speed

·Built-in Damper Diode

APPLICATIONS

·Designed for horizontal deflection output stage

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

1500

V

VEBO

Emitter-Base Voltage

IC(peak) Collector Current-Peak

IC(surge) Collector Current-Surge

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

5

V

14

A

28

A

50

W

150

℃

-55~150

℃

isc Website：www.iscsemi.cn

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