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Компоненты Описание
2SC5359 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SC5359
Silicon NPN Power Transistors
Inchange Semiconductor
2SC5359 Datasheet PDF : 4 Pages
1
2
3
4
Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
(BR)CEO
Collector-emitter breakdown voltage I
C
=50mA; I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=8 A;I
B
=0.8A
V
BE
Base-emitter voltage
I
C
=7A ; V
CE
=5V
I
CBO
Collector cut-off current
V
CB
=230V ;I
E
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE-1
DC current gain
I
C
=1A ; V
CE
=5V
h
FE-2
DC current gain
I
C
=7A ; V
CE
=5V
f
T
Transition frequency
I
C
=1A ; V
CE
=5V
C
OB
Output capacitance
I
E
=0; V
CB
=10V;f=1MHz
h
FE-1
classifications
R
O
55-110
80-160
Product Specification
2SC5359
MIN TYP. MAX UNIT
230
V
0.4
3.0
V
1.0
1.5
V
5
μ
A
5
μ
A
55
160
35
30
MHz
200
pF
2
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