2SC5354 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SC5354

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC5354

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0

V(BR)CBO Collector-Base Breakdown Voltage

IC= 1mA; IE= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB=B 0.4A

VBE(sat) Base-Emitter Saturation Voltage

IC= 2A; IB=B 0.4A

ICBO

Collector Cutoff Current

VCB= 800V; IE=0

IEBO

Emitter Cutoff Current

VEB= 7V; IC=0

hFE-1

DC Current Gain

IC= 10mA; VCE= 5V

hFE-2

DC Current Gain

IC= 0.5A; VCE= 5V

Switching times

tr

Rise Time

tstg

Storage Time

tf

Fall Time

IC= 4A; IB1= 0.4A; IB2= -0.8A;

RL= 200Ω; PW=20μs;

VCC≈ 400V; Duty Cycle≤1%

MIN TYP. MAX UNIT

800

V

900

V

1.0

V

1.3

V

0.1 mA

1.0 mA

10

15

0.7 μs

4.0 μs

0.5 μs

isc Website：www.iscsemi.cn

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