2SC5354 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SC5354 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5354
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 800V(Min)
·High Switching Speed
APPLICATIONS
·High speed and high voltage switching applications.
·Switching regulator applications.
·High speed DC-DC converter applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base voltage
7
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Pulse
10
A
IBB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2
A
100
W
150
℃
-55~150
℃
isc Website：www.iscsemi.cn
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