C5480 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

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производитель

C5480

Silicon NPN Triple Diffused Horizntal Deflection Output

Hitachi -> Renesas Electronics 

2SC5480

Collector to Emitter Saturation Voltage

vs. Collector Current

10

IC / I B = 4

5

2

75 °C

1

25 °C

0.5

0.2

0.1

Tc = –25 °C

0.05

0.1 0.2 0.5 1 2

5 10 20

Collector Current I C (A)

Base to Emitter Saturation Voltage

vs. Collector Current

10

I C/ I B= 4

5

2

Tc = –25°C

1

0.5

25 °C

75 °C

0.2

0.1

0.1 0.2 0.5 1 2 5 10 20

Collector Current I C (A)

Collector to Emitter Saturation Voltage

vs. Base Current

10

9A

7A

5

I C= 5 A

0 Tc = 25°C

0.1 0.2 0.5 1 2

5 10

Base Current I B (A)

Fall Time vs. Base Current

0.8

I CP = 7 A

fH = 31.5 kHz

0.6 Tc = 25°C

0.4

0.2

0

1.0 1.4 1.8 2.2 2.6 3.0 3.4

Base Current I B1 (A)

4

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