2SC5359-O(Q) Просмотр технического описания (PDF) - Toshiba
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производитель
2SC5359-O(Q) Datasheet PDF : 4 Pages
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IC – VCE
20
Common emitter
Tc = 25°C
16
800
600
400
300
12
250
200
150
8
100
IB = 10 mA 50
4
40
30
20
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
1
0.3
0.1 −25
0.03
0.01
0.01
Tc = 100°C
25
Common emitter
IC/IB = 10
0.1
1
10
100
Collector current IC (A)
2SC5359
IC – VBE
20
Common emitter
VCE = 5 V
16
12
8
Tc = 100°C
4
25
−25
0
0
0.4
0.8
1.2
1.6
2.0
Base-emitter voltage VBE (V)
300
Tc = 100°C
100
25
30
−25
10
hFE – IC
3 Common emitter
VCE = 5 V
1
0.01
0.1
1
10
100
Collector current IC (A)
Safe Operating Area
100
IC max (pulsed)*
30
IC max (continuous)
10
3
1 ms*
10 ms*
100 ms*
DC operation
1
Tc = 25°C
0.3
0.1 *: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated
0.03 linearly with increase in
temperature.
0.01
1
3
10 30 100
VCEO max
300 1000 3000
Collector-emitter voltage VCE (V)
3
2004-07-07
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