2SC5359-O(Q) Просмотр технического описания (PDF) - Toshiba
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2SC5359-O(Q) Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5359
Power Amplifier Applications
2SC5359
Unit: mm
• High breakdown voltage: VCEO = 230 V
• Complementary to 2SA1987
• Suitable for use in 100-W high fidelity audio amplifier’s output stage.
Maximum Ratings (Tc = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
230
V
230
V
5
V
15
A
1.5
A
180
W
150
°C
−55 to 150
°C
Electrical Characteristics (Tc = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-21F1A
Weight: 9.75 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 230 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 50 mA, IB = 0
hFE (1)
VCE = 5 V, IC = 1 A
(Note)
hFE (2)
VCE (sat)
VBE
VCE = 5 V, IC = 7 A
IC = 8 A, IB = 0.8 A
VCE = 5 V, IC = 7 A
fT
VCE = 5 V, IC = 1 A
Cob
VCB = 10 V, IE = 0, f = 1 MHz
Note: hFE (1) classification R: 55 to 110, O: 80 to 160
Min Typ. Max Unit
―
―
5.0
µA
―
―
5.0
µA
230 ―
―
V
55
― 160
35
87
―
―
0.4 3.0
V
―
1.0 1.5
V
―
30
― MHz
― 200 ―
pF
1
2004-07-07
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