2SC5354-1(F) Просмотр технического описания (PDF) - Toshiba

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2SC5354-1(F)

Silicon NPN Triple Diffused Type Transistor

Toshiba 

TOSHIBA Transistor Silicon NPN Triple Diffused Type

2SC5354

High-Speed and High-Voltage Switching Applications

Switching Regulator Applications

High-Speed DC-DC Converter Applications

2SC5354

Unit: mm

• Excellent switching times: tr = 0.7 μs (max)

tf = 0.5 μs (max) (IC = 2 A)

• High breakdown voltage: VCEO = 800 V

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

Pulse

Base current

Collector power dissipation

(Tc = 25°C)

Junction temperature

Storage temperature range

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

900

V

800

V

7

V

5

A

8

2

A

100

W

150

°C

−55 to 150

°C

JEDEC

―

JEITA

―

TOSHIBA

2-16C1A

Weight: 4.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

1

2006-11-10

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