2SC5556 Просмотр технического описания (PDF) - Panasonic Corporation
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2SC5556 Datasheet PDF : 3 Pages
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Transistors
2SC5556
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■ Features
• Low noise figure NF
• High transition frequency fT
• Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
15
V
Collector-emitter voltage (Base open) VCEO
10
V
Emitter-base voltage (Collector open) VEBO
2
V
Collector current
IC
80
mA
Collector power dissipation *
PC
300
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
Note) *: Copper plate at the collector is more than 1 cm2 in area, 1.0 mm in thickness
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking Symbol: 3K
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
15
V
Collector-emitter voltage (Base open) VCEO IC = 100 µA, IB = 0
10
V
Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
1
µA
Emitter-base cutoff current (Collector open) IEBO VEB = 2 V, IC = 0
1
µA
Forward current transfer ratio
hFE VCE = 8 V, IC = 20 mA
110
250
Transition frequency
fT
VCE = 8 V, IC = 20 mA, f = 800 MHz
5
6
GHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
0.9 1.2
pF
Foward transfer gain
S21e2 VCE = 8 V, IC = 20 mA, f = 800 MHz
7.5 10.0
dB
Maximum unilateral power gain
GUM VCE = 8 V, IC = 20 mA, f = 800 MHz
11.5
dB
Noise figure
NF VCE = 8 V, IC = 20 mA, f = 800 MHz
1.7
dB
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
SJC00278BED
1
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