2SC5250 Просмотр технического описания (PDF) - SavantIC Semiconductor

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производитель

2SC5250

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC5250

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)EBO Emitter-base breakdown voltage

IC=400mA ;IB=0

ICES

Collector cut-off current

VCE=1500V; RBE=0

hFE-1

DC current gain

IC=1A ; VCE=5V

hFE-2

DC current gain

IC=5A ; VCE=5V

VCE(sat) Collector-emitter saturation voltage IC=5A ; IB=1.25A

VBE(sat) Base-emitter saturation voltage

IC=5A ; IB=1.25A

VECF

tf

Forward voltage of damper diode

Fall time

IF=8A

ICP=5A;IB1=1A;

fH=31.5kHz

MIN TYP. MAX UNIT

6

V

500

µA

6

25

4

7

5

V

1.5

V

2

V

0.2

0.4

µs

2

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