C5249 Просмотр технического описания (PDF) - Inchange Semiconductor
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C5249 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC5249
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB=B 0.2A
0.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB=B 0.2A
1.2
V
ICBO
Collector Cutoff Current
VCB= 600V ; IE= 0
100 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
100 μA
www.iscsemi.cn hFE
DC Current Gain
IC= 1A ; VCE= 4V
20
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IE= -0.3A ; VCE= 12V
Switching Times
50
6
ton
Turn-On Time
tstg
Storage Time
IC= 1A; IB1= -IB2= 0.1A;
VCC= 200V; RL= 200Ω
40
pF
MHz
1.0 μs
19 μs
tf
Fall Time
1.0 μs
isc Website：www.iscsemi.cn
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