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Компоненты Описание
2SC5353 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SC5353
Silicon NPN Triple Diffused Type (PCT process) Transistor
Toshiba
2SC5353 Datasheet PDF : 4 Pages
1
2
3
4
I
C
– V
CE
Common emitter
Tc = 25°C
1.0
3
0.8
0.6
0.5
2
0.4
0.3
0.2
1
0.1
0.05
IB = 0.02 A
0
0
2
4
6
8
10
Collector-emitter voltage V
CE
(V)
h
FE
– I
C
1000
100
Tc = 100°C
25
10
−
55
Common emitter
VCE = 5 V
1
0.001
0.01
0.1
1
10
Collector current I
C
(A)
2SC5353
I
C
– V
BE
3
Common emitter
VCE = 5 V
2
1
Tc = 100°C
25
−
55
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage V
BE
(V)
V
CE (sat)
– I
C
10
Common emitter
IC/IB = 5
1
Tc = 100°C
25
0.1
−
55
0.05
0.01
0.1
1
10
Collector current I
C
(A)
10
1
0.1
0.01
V
BE (sat)
– I
C
Common emitter
IC/IB = 5
−
55
25
Tc = 100°C
0.1
1
10
Collector current I
C
(A)
Switching Characteristics
10
IC = 5IB1
2IB1 =
−
IB2
Pulse width
= 20
μ
s
Duty cycle
tstg
≤
1%
Tc = 25°C
1
tf
tr
0.1
0.01
0.1
1
10
Collector current I
C
(A)
3
2006-11-10
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