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2SC5353

Silicon NPN Triple Diffused Type (PCT process) Transistor

Toshiba 

2SC5353

TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)

2SC5353

Switching Regulator and High Voltage Switching

Applications

High-Speed DC-DC Converter Applications

Unit: mm

• Excellent switching times: tr = 0.7 μs (max), tf = 0.5 μs (max)

• High collectors breakdown voltage: VCEO = 800 V

Absolute Maximum Ratings (Tc = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

DC

Pulse

Base current

Collector power

dissipation

Ta = 25°C

Tc = 25°C

Junction temperature

Storage temperature range

VCBO

VCEO

VEBO

IC

ICP

IB

PC

Tj

Tstg

900

V

800

V

7

V

3

A

5

1

A

2.0

W

25

150

°C

−55 to 150

°C

JEDEC

―

JEITA

SC-67

TOSHIBA

2-10R1A

Weight: 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.) may cause this product to

decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

1

2006-11-10

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