2SC5071 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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производитель
2SC5071 Datasheet PDF : 4 Pages
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JMnic
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=25mA ;IB=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A
VCEsat Collector-emitter saturation voltage IC=7A ;IB=1.4A
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
VCB=500V; IE=0
VEB=10V; IC=0
IC=7A ; VCE=4V
COB
Output capacitance
IE=0 ; VCB=10V,f=1MHz
fT
Transition frequency
IE=-1A ; VCE=12V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=7A;RL=28.5Ω
IB1=0.7A; IB2=-1.4A
VCC=200V
Product Specification
2SC5071
MIN TYP. MAX UNIT
400
V
0.5
V
1.3
V
100 μA
100 μA
10
30
105
pF
10
MHz
1.0
μs
3.0
μs
0.5
μs
2
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