2SC4992 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics

Номер в каталоге

Компоненты Описание

производитель

2SC4992

Silicon NPN Bipolar Transistor

Hitachi -> Renesas Electronics 

2SC4992

Table 2 Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Typ

Max

Unit

Test conditions

———————————————————————————————————————————

Collector to base

breakdown voltage

V(BR)CBO 15

—

—

V

IC = 10 µA, IE=0

———————————————————————————————————————————

Collector cutoff current

ICBO

—

—

1

µA

VCB = 12 V,

IE = 0

———————————————————————————————

ICEO

—

—

1

mA

VCE = 9 V,

RBE = ∞

———————————————————————————————————————————

Emitter cutoff current

IEBO

—

—

10

µA

VEB = 1.5 V,

IC = 0

———————————————————————————————————————————

DC current transfer ratio

hFE

50

120

250

VCE = 5 V,

IC = 20 mA

———————————————————————————————————————————

Output capacitance

Cob

—

8.5

1.3

pF

VCB = 5 V,

IE = 0, f = 1 MHz

———————————————————————————————————————————

Gain bandwidth

fT

6.5

9.5

—

GHz VCE = 5 V,

product

IC = 20 mA

———————————————————————————————————————————

Power gain

PG

12

15

—

dB

VCE = 5 V,

IC = 20 mA,

f = 900 MHz

———————————————————————————————————————————

Noise figure

NF

—

1.2

2.5

dB

VCE = 5 V,

IC = 5 mA,

f = 900 MHz

———————————————————————————————————————————

Note:

Marking of 2SC4992 is "YR–".

Attention: This device is very sensitive to electro static discharge.

It is recommended to adop appropriate cautions when handling this transistor.

Share Link: