Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
2SC5030 Просмотр технического описания (PDF) - Toshiba
Номер в каталоге
Компоненты Описание
производитель
2SC5030
TOSHIBA Transistor Silicon NPN Epitaxial Type
Toshiba
2SC5030 Datasheet PDF : 5 Pages
1
2
3
4
5
2SC5030
1000
100
r
th
– t
w
Curves should be applied in thermal limited area. (single nonrepetitive pulse)
Ta = 25°C
10
1
0.1
0.001
0.01
0.1
1
10
Pulse width t
w
(s)
Safe Operating Area
20
10 IC max (pulsed)
*
IC max (continuous)
5
3
100 ms
*
10 ms
*
1 ms
*
1
DC operation
0.5
Ta = 25°C
0.3
*
: Single nonrepetitive pulse
0.1
Ta = 25°C
Curves must be derated
0.05
linearly with increase in
temperature.
0.03
0.1
0.3 0.5 1
VCEO max
3 5 10
30
Collector-emitter voltage V
CE
(V)
100
1000
4
2004-07-26
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]