2SC5104 Просмотр технического описания (PDF) - Panasonic Corporation
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2SC5104 Datasheet PDF : 4 Pages
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Power Transistors
2SC5104
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
■ Features
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
• Wide safe operation area
• Satisfactory linearity of forward current transfer ratio hFE
• N type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
■ Absolute Maximum Ratings TC = 25°C
Parameter
Symbol Rating
Unit
Collector-base voltage (Emitter open) VCBO
500
V
Collector-emitter voltage (E-B short) VCES
500
V
Collector-emitter voltage (Base open) VCEO
400
V
Emitter-base voltage (Collector open) VEBO
7
V
Base current
IB
1.2
A
Collector current
IC
3
A
Peak collector current
ICP
6
A
Collector power dissipation
PC
30
W
Ta = 25°C
1.3
Junction temperature
Tj
150
°C
Storage temperature
Tstg −55 to +150 °C
8.5±0.2
6.0±0.2
Unit: mm
3.4±0.3
1.0±0.1
0 to 0.4
0.8±0.1
2.54±0.3
1.4±0.1
5.08±0.5
R = 0.5
R = 0.5
1.0±0.1
0.4±0.1
123
(8.5)
(6.0) 1.3
(6.5)
1: Base
2: Collector
3: Emitter
N-G1 Package
Note) Self-supported type package is also prepared.
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
VCEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
ton
tstg
tf
IC = 10 mA, IB = 0
VCB = 500 V, IE = 0
VEB = 5 V, IC = 0
VCE = 5 V, IC = 0.1 A
VCE = 1 V, IC = 1 A
IC = 1.5 A, IB = 0.3 A
IC = 1.5 A, IB = 0.3 A
VCE = 10 V, IC = 0.2 A, f = 1 MHz
IC = 1.5 A
IB1 = 0.15 A, IB2 = − 0.3 A
VCC = 200 V
400
V
100 µA
100 µA
15
15
30
1.0
V
1.5
V
10
MHz
1.0
µs
3.0
µs
0.3
µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00139BED
1
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